Visualizing radical-surface interactions in plasma deposition processes: reactivity of SiH/sub 3/ radicals with Si surfaces

摘要

There is a need for improving our fundamental understanding of the radical surface interactions during plasma enhanced chemical vapor deposition of Si. Toward this goal, we have calculated the interaction energy between SiH/sub 3/ radicals and various Si surfaces, and mapped the changes in this energy as a function of position on the surface. Application of this analysis to the SiH/sub 3/ radical impinging on a variety of Si surfaces, coupled with detailed investigation of the radical impingement dynamics, proved valuable in understanding and visualizing the driving forces that determine the nature of the radical-surface interactions during plasma deposition of Si.