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首页> 外文期刊>IEEE Transactions on Plasma Science >Secondary electron yield measurements from materials with application to collectors of high-power microwave devices
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Secondary electron yield measurements from materials with application to collectors of high-power microwave devices

机译:材料的二次电子产率测量,应用于大功率微波设备的收集器

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摘要

An experimental test facility has been established for measuring the secondary electron yield (SEY) of materials thought to be suitable for low yield vacuum electronic applications such as collectors in high-power microwave (HPM) tubes. Experiments can be broadly divided into two energy-regimes: a high-energy (1-50 keV) and a low-energy (10 eV-1 keV) regime. Measurements of SEY at high energies are presented for the following materials: copper, titanium, and Poco graphite. Observation of time-dependent SEY behavior in these samples suggests that surface processes play an important role during measurements. In addition, SEY at low energies and as a function of the angle of incidence of primary electrons has been measured for plasma sprayed boron carbide (PSBC). The experimental results presented here are benchmarked with existing SEY data in the literature, empirically and to first principle formulae.
机译:已经建立了实验测试设施,用于测量被认为适用于低产量真空电子应用(例如大功率微波(HPM)管中的收集器)的材料的二次电子产率(SEY)。实验大致可分为两种能量方案:高能量(1-50 keV)和低能量(10 eV-1 keV)方案。提出了以下材料在高能量下的SEY测量:铜,钛和Poco石墨。在这些样品中观察到随时间变化的SEY行为表明表面过程在测量过程中起着重要作用。此外,对于等离子喷涂碳化硼(PSBC),已经测量了低能量下的SEY并作为一次电子的入射角的函数。此处提供的实验结果以文献中现有的SEY数据为依据,以经验为依据并符合第一原理公式。

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