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Biased Atmospheric, Sub-Atmospheric, and Low-Pressure Air Plasmas for Material Surface Improvements

机译:偏压大气压,低于大气压和低压空气等离子体,可改善材料表面

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摘要

This paper deals with some important aspects of recent research related to atmospheric, sub-atmospheric (SA), and low-pressure plasmas. It calls attention to the definition of the pressure ranges in which they are divided to avoid misconceptions in the literature. Pulsed bias applied to elements inside the plasma can lead to important effects such as ion implantation, nitriding, sputtering, heating, and diffusion, which can result in some of the effective applications in surface engineering such as plasma immersion ion implantation (PI3), plasma nitriding, magnetron sputtering, and so on. Electric fields are essential for the production of different types of plasma, either ac, dc, or pulsed ones, as seen in RF, self-sustained, glow, and high-voltage glow discharges, for example. The interrelation between the bias pulse, mean-free path, and Paschen law is examined, seeking for further improvement of processing of the material surface being used in many modern technologies. Results on PI3 in the low and near SA pressures, as well as their applications in metals, are also discussed.
机译:本文讨论了有关大气,低于大气压(SA)和低压等离子体的最新研究的一些重要方面。它引起人们注意压力范围的定义,在压力范围内划分压力以避免文献中的误解。施加在等离子体内部元素上的脉冲偏压会导致重要的影响,例如离子注入,氮化,溅射,加热和扩散,这可能会在表面工程中产生某些有效的应用,例如等离子体浸没离子注入(PI3),等离子体氮化,磁控溅射等。电场对于产生各种类型的等离子体至关重要,例如交流,直流或脉冲等离子体,例如从射频,自持放电,辉光和高压辉光放电中可以看出。研究了偏置脉冲,平均自由程和Paschen定律之间的相互关系,以寻求进一步改进许多现代技术中使用的材料表面的加工方法。还讨论了在较低和接近SA压力下PI3的结果及其在金属中的应用。

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