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机译:气态热电子真空电弧(G-TVA)沉积技术合成纳米结构的a-C:H(氢化非晶碳)薄膜
Department of Physics, Ovidius University, 900527, Constanţa, Romania;
Department of Physics, Ovidius University, 900527, Constanţa, Romania;
Department of Physics, Ovidius University, 900527, Constanţa, Romania;
Department of Physics, Ovidius University, 900527, Constanţa, Romania;
Department of Physics, Ovidius University, 900527, Constanţa, Romania;
Department of Physical Electronics, Masaryk University, 61137, Brno, Czech Republic;
Hydrogenated carbon; G-TVA; Raman spectroscopy; Mechanical properties;
机译:气态热电子真空电弧(G-TVA)-TVA(热电子真空电弧)输入材料的扩展,从固体样品到气体和液体,用于碳薄膜沉积
机译:热电子真空电弧技术沉积含锡碳无定形复合膜
机译:纳米晶碳掺杂薄膜通过热离子真空弧沉积技术的相关研究
机译:气态热电子真空电弧(G-TVA)–一种通过蒸发液体或气体沉积碳膜的新方法
机译:氢化非晶硅,微晶硅和硅基合金薄膜的沉积和表征。
机译:非晶氢化碳膜(a-C:H)精制可持续的聚己二酸对苯二甲酸丁二醇酯(PBAT)揭示了膜厚度随sp2 / sp3比率变化而变化的不稳定性
机译:使用直流等离子体增强化学气相沉积(DC-PECVD)技术沉积的氢化非晶碳(a-C:H)薄膜的结构和光学性质