Role of steps in deposition rate in silane chemical vapor deposition on Si(111)

摘要

Si(111) homoepitaxy using silane chemical vapor deposition was studied during growth with scanning tunneling microscopy at high temperature (730 K). The initial substrate corresponds to the 7 x 7 reconstruction while the layers grow in a 1 x 1 structure partially hydrogenated. The layer distribution is directly measured and shows a higher deposition rate on the 1 x 1 surface than on the 7 x 7 surface. We show that the regime of incorporation of silicon at step edges influences the reactivity of the surface.