Stacking Faults In Homoepitaxy On Ir(111): Detection, Evolution With Film Thickness,rnand Associated Defect Patterns

摘要

Scanning tunneling microscopy and low energy electron diffraction are used to investigate the evolution of the stacking fault covered surface area during growth and annealing of thin Ir films on Ir(111). Key elements driving the evolution of faulted surface area with film thickness are identified.