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机译:Si(001)和Si(110)纳米膜中应变与能带结构的关系
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA Xi'an Jiaotong University, Xi'an, Shannxi 710049, China;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
University of Utah, Salt Lake City, Utah 84112, USA Center for Advanced Study, Tsinghua University, Beijing 100084, China;
Institute of Physics, CAS, Beijing 100190, China;
University of Utah, Salt Lake City, Utah 84112, USA;
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
semiconductors; strain-induced splitting; elemental semiconductors;
机译:应变路径对初始取向为(110)[001]和(110)[10]的铜单晶的微观结构和织构发展的影响
机译:纳米膜中外加应变在单轴应变Si中的导带结构和电子迁移率
机译:应变对应变硅纳米膜导带结构的影响
机译:弹性应变共享Si(110)纳米膜
机译:应变硅纳米膜的应变带结构关系。
机译:具有共同的两波段IS6110模式的结核分枝杆菌菌株的分子分型
机译:Fe-3%Si合金的变形退火单晶(110)[001]结构中与过渡带有关的特殊取向不良的形成