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SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting

召开年：2010
召开地：Las Vegas, NV(US);Las Vegas, NV(US)
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1.Aspect Ratio Trapping: a Unique Technology for Integrating Ge and Ⅲ-Ⅴs with Silicon CMOS

机译：长宽比陷印：一种将Ge和Ⅲ-Ⅴ与硅CMOS集成的独特技术
- 作者：J. G. Fiorenza;J.-S. Park;J. M. Hydrick;J.Li;J. Z. Li;M. Curtin;M. Carroll;A. Lochtefeld
- 会议名称：《SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting》 | 2010年
2.Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs

机译：循环沉积/蚀刻工艺，用于在高级MOSFET中形成硅凸起的源极和漏极
- 作者：J.M. Hartmann;M. Py;P.H. Morel;T. Ernst;B. Previtali;J.P. Barnes;N. Vulliet;N. Cherkashin;S. Reboh;M. Hytch;V. Paillard
- 会议名称：《SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting》 | 2010年
3.Past, Present and Future: SiGe and CMOS Transistor Scaling

机译：过去，现在和未来：SiGe和CMOS晶体管缩放
- 作者：K. J. Kuhn;A. Murthy;R. Kotlyar;M. Kuhn
- 会议名称：《SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting》 | 2010年
4.Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks

机译：高k栅堆叠中氧化物界面上偶极层的形成
- 作者：Koji Kita;Li Qiang Zhu;Tomonori Nishimura;Kosuke Nagashio;Akira Toriumi
- 会议名称：《SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting》 | 2010年