机译:衬底表面极性对化学气相沉积ZnO层同质外延生长的影响
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;
I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany;
I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany;
I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany;
National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;
Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors; diffusion; interface formation; Ⅱ-Ⅵ semiconductors;
机译:衬底极性对高压化学气相沉积生长InN层结构质量的影响
机译:通过甲烷基化学气相沉积,Si(111)衬底上具有中间Aln成核层的外延ZnO层生长
机译:通过金属有机化学气相沉积在(0001)取向的AlN衬底上进行AlN的表面制备和同质外延沉积
机译:在{0001} ZnO衬底上生长的高质量同质外延ZnO层的极性依赖性和表征
机译:金属化学气相沉积种植的氮化镓外膜中的极性控制
机译:金属有机化学气相沉积对蓝宝石衬底上ZnO纳米结构的生长性能的影响
机译:低压热壁化学气相沉积4H-siC外延层的同质外延生长及表征
机译:通过微波等离子体辅助化学气相沉积在高温下高生长率同质外延金刚石膜沉积