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Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

机译：低压热壁化学气相沉积4H-siC外延层的同质外延生长及表征

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Guosheng Sun; Jin Ning; Quancheng Gong; Xin Gao;
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1. The growth of low resistivity, heavily Al-doped 4H-SiC thick epilayers by hot-wall chemical vapor deposition [J] . Shiyang Ji, Kazutoshi Kojima, Yuuki Ishida, Journal of Crystal Growth . 2013,第octa1期

机译：通过热壁化学气相沉积法生长低电阻率，重掺杂Al的4H-SiC厚外延层
2. Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition [J] . Shiyang Ji, Kazutoshi Kojima, Yuuki Ishida, Japanese journal of applied physics . 2013,第4Issue2期

机译：热壁化学气相沉积抑制Al记忆对生长的4H-SiC外延层的影响
3. Low resistivity, thick heavily Al-doped 4H-SiC epilayers grown by hot-wall chemical vapor deposition [J] . Shiyang Ji, Kazutoshi Kojima, Yuuki Yishida, Materials science forum . 2013,第期

机译：通过热壁化学气相沉积法生长的低电阻率，厚重Al掺杂的厚4H-SiC外延层
4. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition [C] . Guosheng Sun, Jin Ning, Quancheng Gong, International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2005

机译：低压热壁化学气相沉积法制备4H-SiC外延层的同质外延生长和表征
5. Polytype stability, microstructural evolution, and impurities at the interface of homoepitaxial 4H-silicon carbide(1120) thin films grown via hot-wall chemical vapor deposition [D] . Bishop, Seann M. G. 2006

机译：通过热壁化学气相沉积法生长的同质外延4H-碳化硅（1120）薄膜的界面上的多型稳定性，微观结构演变和杂质
6. Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition [O] . Eric Moore, Joshua Jarrell, Lei Cao 2017

机译：微波等离子体化学气相沉积法在4H-SiC上异质外延金刚石生长
7. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition [O] . Alassaad, Kassem, Soulière, Véronique, Cauwet, François, 2014

机译：通过化学方法在同轴生长期间在Ge中掺入4H-siC 气相沉积
8. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition [R] . 1997

机译：通过微波等离子体辅助化学气相沉积在高温下高生长率同质外延金刚石膜沉积

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

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