Energy spectrum of layered semiconductors in a magnetic field parallel to the layers: Voigt geometry

摘要

The electronic band structure of zinc-blende layered semiconductor heterostructures is investigated theoretically in the presence of an in-plane magnetic field, a configuration we label as the Voigt geometry. We use a Lagrangian formulation for modeling the band structure in the individual layers within the k-P model. This approach has been shown by us to provide the correct ordering of the derivatives appearing in the multiband description of Schrodinger's equations for the envelope functions through the application of the principle of stationary action. Finite element modeling of the action integral provides a natural and efficient approach to the inclusion of in-plane magnetic fields in the energy-level analysis. Calculations for quantum wells and super-lattices are presented, and the complex energy-level structure obtained for the layered structures.