Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_(1-x)Sb_x)_2Te_3

摘要

The Hall effect and the Shubnikov-de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi_(1-x)Sb_x)_2Te_3 (0 <= x <= 1.0) Sn doped single crystals. Doping of (Bi_(1-x)Sb_x)_2Te_3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi_(1-x)Sb_x)_2Te_3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρ_H as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment.