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Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts

机译:(In,Ga)As量子点接触中塞曼自旋分裂的场取向依赖性

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摘要

We study the Zeeman spin splitting in a quantum point contact (QPC) etched into an InGaAs/InP hetero-structure for three orthogonal magnetic field orientations with respect to the QPC. For the two in-plane orientations we observe an isotropic Zeeman spin splitting, which becomes stronger as the system is made more one dimensional. The Lande g factor is enhanced by up to a factor of two compared to two-dimensional electron systems in InGaAs/lnP. A much larger Zeeman splitting is observed when the field is oriented perpendicular to the heterostructure, resulting in a g factor of 15.7 in the one-dimensional limit.
机译:我们研究了在相对于QPC的三个正交磁场方向上蚀刻到InGaAs / InP异质结构的量子点接触(QPC)中的塞曼自旋分裂。对于两个面内方向,我们观察到了各向同性的塞曼自旋分裂,随着系统的尺寸增大,该分裂变得更强。与InGaAs / lnP中的二维电子系统相比,Lande g因子最多可提高两倍。当场垂直于异质结构取向时,观察到更大的塞曼分裂,导致一维极限的g因子为15.7。

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