Zeeman splitting in ballistic GaInAs/InP split-gate quantum point contacts

摘要

The Zeeman splitting in ballistic Ga_xIn_(1-x)As/InP split-gate point contacts was investigated. The measurements were performed in a magnetic field perpendicular to the plane of the two-dimensional electron gas. The Zeeman energy splitting between the one-dimensional subbands was determined by measuring the differential conductance as a function of the dc source-drain voltage across the point contact. The g factor of approximately 4.0 extracted from measurements at various magnetic fields agrees well to the value obtained by other methods for this type of heterostructure.