III-V semiconductors; Zeeman effect; aluminium compounds; g-factor; gallium arsenide; quantum point contacts; semiconductor heterojunctions; spin-orbit interactions; 1D confinement; 1D heavy holes; GaAs-AlGaAs; Zeeman spin splitting; anisotropy mapping; crystal anisotropy; direct transport measurements; g-factors; quantum point contact; spin-orbit coupling; Anisotropic magnetoresistance; Couplings; Extraterrestrial measurements; Gallium arsenide; Logic gates; Perpendicular magnetic anisotropy; Gallum arsenide; quantum well devices; two dimensional hole gas;
机译:(100)GaAs / Al_xGa_(1-x)As异质结构用于空穴量子线的塞曼自旋分裂研究
机译:空穴子带混合对In0.045Ga0.955As / GaAs双量子阱中重空穴激子自旋分裂的影响
机译:GaAs / AlGaAs量子阱中光孔能级的巨大塞曼分裂实验观察
机译:在GaAs量子点接触中映射Zeeman旋转分裂的塞曼的各向异性
机译:GaAs电子和空穴系统中的可调谐费米轮廓各向异性。
机译:II型ZnTe / ZnSe亚单层量子点中的长自旋翻转时间和大的Zeeman裂隙
机译:观察取向和$ k $依赖的塞曼自旋分裂 在(100)取向的alGaas / Gaas异质结构上的空穴量子线
机译:Gaas量子阱中的自旋翻转诱导空穴燃烧:激子塞曼分裂的测定