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Mapping the anisotropy of the Zeeman spin splitting of one-dimensional heavy holes in a GaAs quantum point contact

机译:GaAs量子点接触中一维重空穴的塞曼自旋分裂的各向异性映射

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We have studied the anisotropic Zeeman splitting of ID holes formed on a (100) GaAs/AlGaAs heterostructure on a single cooldown. The strong spin-orbit coupling of holes and ID confinement gives rise to a highly anisotropic spin-splitting. In measuring quantum point contacts on the high symmetry (100) plane, we eliminate the effects of crystal anisotropy on our direct transport measurements of the Zeeman spin-splitting. We find that g <; g <; g where g refers to the in-plane g-factors parallel and perpendicular to the QPC, and g refers to the g-factor perpendicular to the 2D interface. We compare our data with existing theories and show that there are aspects of hole spin-splitting which remain to be understood.
机译:我们研究了一次冷却时在(100)GaAs / AlGaAs异质结构上形成的ID孔的各向异性塞曼分裂。空穴和ID约束的强自旋轨道耦合引起了高度各向异性的自旋分裂。在高对称(100)平面上测量量子点接触时,我们消除了晶体各向异性对我们对塞曼自旋分裂的直接传输测量的影响。我们发现g <; g <; g,其中g表示平行于和垂直于QPC的面内g因子,g表示垂直于2D接口的g因子。我们将我们的数据与现有理论进行了比较,结果表明,仍有一些空穴自旋分裂的方面尚待理解。

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