(100) GaAs/Al_xGa_(1-x)As heterostructures for Zeeman spin splitting studies of hole quantum wires

摘要

We have developed undoped (100) GaAs/AI_(0.34)Ga_(0.66)As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (100) undoped devices with conventional Si modulation doped p-type devices grown on (311) substrates. Finally we present conductance quantization data for hole quantum wires made of these (100) heterostructures.