首页> 外文期刊>Physical review >Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr_(1-x)Mg_xO_2 films
【24h】

Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr_(1-x)Mg_xO_2 films

机译:透明p型铜铁矿CuCr_(1-x)Mg_xO_2薄膜的温度相关带隙,带间跃迁和激子形成

获取原文
获取原文并翻译 | 示例
           

摘要

Temperature-dependent interband transitions and exciton excitations of sol-gel derived CuCr_(1-x)Mg_xO_2 (2% ≤ χ ≤ 8%) films have been investigated by transmittance spectra (8-300 K) and photoluminescence (PL) spectra (77-300 K). An abnormal dependence of the optical band gap with the temperature has been found for the films with x = 0.02 and 0.04. At the low-temperature region, the gap energy shows a redshift trend with decreasing temperature. It is due to the strong Cr 3d-O 2p-Cu 3d interaction in the upper part of the valence band, which can be weaken by heavily Mg doping. The spin-orbit interactions of Cr~(3+) ions in an octahedral environment make the 3d states more disperse, which can contribute to the relatively high conductivity. A well-defined low-energy absorption has been assigned to the spin-allowed 3d → 3d transition. Moreover, a strong exciton excitation around 1.8 eV has been observed due to the naturally low-dimensional structure of the delafossite, which can be modulated by temperature and hole concentration.
机译:通过透射光谱(8-300 K)和光致发光(PL)光谱研究了溶胶-凝胶衍生的CuCr_(1-x)Mg_xO_2(2%≤χ≤8%)薄膜的温度相关带间跃迁和激子激发。(77 -300 K)。对于x = 0.02和0.04的膜,已经发现光学带隙对温度的异常依赖性。在低温区域,随着温度的降低,能隙能量呈现出红移趋势。这是由于在价带的上部具有强烈的Cr 3d-O 2p-Cu 3d相互作用,这可以通过大量掺杂Mg来减弱。 Cr_(3+)离子在八面体环境中的自旋轨道相互作用使3d态更加分散,这有助于相对较高的电导率。明确定义的低能吸收已分配给自旋允许的3d→3d过渡。此外,由于铜铁矿的天然低维结构(可通过温度和空穴浓度调节),已观察到约1.8 eV的强激子激发。

著录项

  • 来源
    《Physical review》 |2014年第3期|035308.1-035308.8|共8页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    defects and impurities: doping, implantation, distribution, concentration, etc.; optical properties of bulk materials and thin films; photoluminescence, properties and materials;

    机译:缺陷和杂质:掺杂;注入;分布;浓度等;散装材料和薄膜的光学性能;光致发光;性质和材料;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号