机译:透明p型铜铁矿CuCr_(1-x)Mg_xO_2薄膜的温度相关带隙,带间跃迁和激子形成
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering,East China Normal University, Shanghai 200241, China;
defects and impurities: doping, implantation, distribution, concentration, etc.; optical properties of bulk materials and thin films; photoluminescence, properties and materials;
机译:溶胶-凝胶法制备铜铁矿CuCr_(1-x)Mg_xO_2(0≤x≤12%)薄膜的电子跃迁和电传输性质:组成依赖研究
机译:脉冲激光沉积CuCr_(1-x)Mg_xO_2铜铁矿薄膜的电迁移和结构研究
机译:p型透明导电CuCr_(1_x)Mg_xO_2半导体薄膜中太赫兹光学特性与载流子传输动力学的温度依赖性
机译:通过脉冲激光沉积制备的透明导电CuCr_(1-x)Mg_xO_2膜
机译:用于异质结器件的p型宽带隙透明氧化物的表征。
机译:InSe薄膜中与成分有关的结构相变和光学带隙调整
机译:射频溅射制备铜铁矿掺镁的CuCrO2薄膜的p型导电透明特性