机译:Si插层诱导的石墨烯/ SiC(0001)界面结构及其对石墨烯电子性能的影响
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan;
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan;
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan;
Toyota Technological Institute, Nagoya 468-8511, Japan;
Institute of Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan;
Institute of Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan;
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan;
机译:SiC(0001)上的氧气嵌入石墨烯:多相SiOx层形成及其对石墨烯电子性能的影响
机译:H插层石墨烯-SiC(0001)界面的电子和结构性质
机译:锂嵌入诱导的SiC(0001)外延石墨烯去耦:电子性质和动力学过程
机译:AB Initio研究石墨烯/ SIC {0001}界面的结构和电子性质
机译:使用功能有机分子量身定制石墨烯的电子结构和性能。
机译:三层石墨烯/ SiC(0001)的原子和电子结构:强烈依赖于堆积顺序和电荷转移的证据
机译:通过硅插入向外解耦的6H-SiC(0001)衬底的零层石墨烯的电子性能