Scaling limits and MHz operation in thiophene-based field-effect transistors

摘要

To achieve high performance organic field effect transistors (OFETs) with enhanced currents, high switching speeds and improved integration density the channel length L is down-scaled to the sub-micrometer regime. The influence of important scaling parameters on the electrical performance of bottom contact devices is analyzed. High-mobility oligo- and polythiophenes were used as semiconductor, which combine the advantages of highly ordered growth with processibility from solution. Devices with optimized parameters exhibit high switching frequencies beyond 2 MHz.