Capacitance-voltage and impedance-spectroscopy characteristics ot nanoplate EISOI capacitors

摘要

Frequency-dcpendent capacitance-voltage (C-V) and impe-dancc-spectroscopy characteristics of nanoplate capacitive field-effect electrolyle-insulator-silicon-on-insulator (EISOI) structures with various thicknesses (30, 60 and 350 nm) of the top p-Si layer arc investigated for the first time. The frequency-dependent C-V curves of EISOI structures show an unusual behaviour, which significantly differs from that of conventional EIS structures. Due to the large scries resistance of the nanoplate lop Si, the C-V curves of the EISOE structures show stronger frequency dependence in the accumulation region. In addition, C-V curves show typical low-frequency behaviour even at higher frequencies (up to 8 kHz). An equivalent circuit of an H1SOI structure is discussed taking into account the series resistance of the nanoplale top Si.