• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica status solidi >Enhancement of optical performance of near-UV nitride-based light emitting diodes with different aluminum composition barrier structure
【24h】

Enhancement of optical performance of near-UV nitride-based light emitting diodes with different aluminum composition barrier structure

机译：具有不同铝成分阻挡层结构的近紫外氮化物基发光二极管的光学性能增强

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, the InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet (UV) light-emitting diodes (LEDs) with different aluminum compositions in the barrier layers are investigated and fabricated. The aluminum compositions of LED Ⅰ, Ⅱ, and Ⅲ are 0, 2.5, and 3.85%, respectively. The light output powers of LED Ⅰ, Ⅱ, and Ⅲ at an injection current of 350mA are 95.46, 135.48 mW, and 179.54mW, respectively. The light output power measured from LED Ⅲ was 88% larger than that of LED Ⅰ. The peak external quantum efficiency was enhanced from 9.24 to 17.26%. This result was attributed to the improvement of carrier confinement in the active region by using AlGaN-based barrier layers. The hot-cold effect of LEDs as functions of junction temperature currently is a very important key issue for actual application to LEDs. As the temperature increased, the injected carriers became excited and easily escaped from the active layer. Thus, the light output power of the LED decreased as the temperature increased. Compared with LED Ⅰ and LED Ⅱ, the light output power of LED Ⅲ with better carrier confinement was decreased more slowly with increasing temperature.
机译：在这项工作中，研究和制造了在阻挡层中具有不同铝成分的InGaN / AlGaN多量子阱（MQW）近紫外（UV）发光二极管（LED）。 LEDⅠ，Ⅱ和Ⅲ的铝含量分别为0、2.5和3.85％。在注入电流为350mA时，LEDⅠ，Ⅱ和Ⅲ的光输出功率分别为95.46、135.48 mW和179.54mW。 LEDⅢ测得的光输出功率比LEDⅠ大88％。峰值外部量子效率从9.24％提高到17.26％。该结果归因于通过使用基于AlGaN的势垒层改善了有源区中的载流子限制。目前，LED的热冷效应是结温的函数，对于实际应用于LED而言，这是一个非常重要的关键问题。随着温度升高，注入的载流子变得兴奋并容易从活性层逸出。因此，LED的光输出功率随着温度的升高而降低。与LEDⅠ和LEDⅡ相比，载流子约束更好的LEDⅢ的光输出功率随着温度的升高而降低得更慢。

著录项

  • 来源
    《Physica status solidi》 |2014年第8期|1769-1772|共4页
  • 作者

    C. K. Wang; Y. Z. Chiou; C. C. Hsiang; D. H. Lee; W. Y. Yan; W. S. Chen; C. M. Cheng; K. H. Chen; J. J. Tang; J. Lee;

  • 作者单位

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    R&D Center, High Power Opto. Incorporation, 40763 Taichung City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering and Computer Science, Tung Fang Design University, 82941 Kaohsiung City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

    Department of Electronic Engineering, Southern Taiwan University of Science and Technology, No. 1, Nan-Tai St., Yung-Kang Dist. 71005 Tainan City, Taiwan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    AlGaN; carrier confinement; InGaN; light-emitting diodes;

    机译：氮化铝镓;承运人限制;氮化镓;发光二极管;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号