Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

摘要

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained by doping intracavity aluminum oxide apertures with silicon. This doping results in a reduced electron energy barrier and therefore a reduced series resistance which leads to better power and heating characteristics. Nearly 50% reductions in operating voltages, 200% increases in light power, and increased operating range are demonstrated. We discuss the direct implications of these results for the design of bipolar cascade vertical cavity surface emitting lasers.