机译:具有逐步梯度组成的MgZnO多量子势垒的ZnO基紫外发光二极管性能增强的数值研究
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, China;
School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, China;
School of Science, Xi'an Polytechnic University, Xi'an, China;
Soft-Impact China (Harbin), Ltd., Harbin, China,Harbin Institute of Technology, Harbin, China;
School of Electronic and Information Engineering, South-Central University for Nationalities, Wuhan, China;
Internal quantum efficiency (IQE); Light-emitting diode (LED); Multiple quantum well (MQW); Ultraviolet (UV); ZnO;
机译:通过对MGZNO屏障的能带改性ZnO / MGZNO多量子孔紫外发光二极管的载体传输改进
机译:基于AIGAN的深紫外发光二极管的奇妙光学性能与基于内仑的最后一个量子屏障和步进电子阻挡层
机译:基于AlGan的365nm紫外发光二极管的性能提高了带工程最后的量子屏障
机译:多量子势垒对InGaN / GaN多量子阱发光二极管性能的影响
机译:增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
机译:纳米粒子掺杂的聚二甲基硅氧烷流体可增强基于AlGaN的深紫外发光二极管的光学性能
机译:通过P型MGZNO电子阻挡层增强MgZnO / ZnO多量子阱发光二极管的紫外线发光二极管