An infrared light-emitting diode having an active layer including a deformation-compensating quantum barrier layer and a buffer layer and a manufacturing method thereof

摘要

The present invention relates to an infrared light emitting diode and a method of manufacturing the same, and more particularly, to an infrared light emitting diode and a method of manufacturing the improved luminous efficiency. The light emitting diode according to the present invention is an infrared light emitting diode having a center wavelength of 940 nm, characterized in that it has an active layer including an InGaAs layer, an AlGaAs layer, and a GaAsP layer.