Light-emitting component used in light-emitting diode comprises semiconductor structure having layers and an active region within the layers, metal electrodes for contacting each layer of the structure, and a migration barrier

摘要

Light-emitting component comprises a semiconductor structure having semiconductor layers (120,140) and an active region (130) within the layers, metal electrodes (150,160) for contacting each of the semiconductor layers of the structure, and a migration barrier for preventing the migration of metal from one of the electrodes onto the surface of the semiconductor layer (140) in contact with the electrode (160). An Independent claim is also included for a process for the production of the light-emitting component. Preferred Features: The electrode (160) contains silver. The component further comprises devices for applying electrical signals via the electrodes. The semiconductor layer (120) is an n-type layer of a III-V semiconductor and the semiconductor layer (140) is a p-type layer of a III-V semiconductor. The migration barrier is a protective ring arranged around the periphery of one of the electrodes.