Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

摘要

We present detailed simulated and experimental results on spectral response of high temperature operating resonant-cavity photodiodes (RCPDs). Room temperature external quantum efficiency (EQE) spectrum shows peaks at resonance wavelength, ground-state emission, and lower reflectivity position. The EQE is ～ 1.25, ～0.7. and ～3.75%, respectively, at the above three peak positions, i.e., 793, 778. and 743 nm. The maximum EQE increases from ～1.25 to ～18% as incident light angle increasing from 0 to 60°. The bandgap of AlGaAs harrier layer was also obtained by the angle dependence of EQH measurement. The amount of EQE/responsivity peak shift with temperature can be determined to be Δλ = T× 0.065 nm K~(-1). which is consistent with the temperature dependence of CM. The maximum responsivity increases from ～0.01 to ～0.19 A W ~(-1) when temperature increasing from 300 to 370 K at -1 V bias. Kor high temperature operating RCPDs, the EQE/ responsivity are largely governed by the lotal absorption within the active region. The performance of RCPDs can be further improved by increasing the pairs of bottom DBR and optimizing the pairs of top DBR.