Optimization of the source field-plate design for low dynamic R_(DS-ON) dispersion of AIGaN/GaN MIS-HEMTs

摘要

AIGaN/GaN MIS-HEMTs with two levels of source field-plates were studied by means of pulsed I-V measurements. These measurements showed that the presence of a source field-plate itself is not enough to guarantee a low dynamic R_(DS-ON) at high OFF-state drain-bias. Simulations of the electric field were carried out to explain the experimental results. It was found that not only does the intensity of the electric field affects the dynamic R_(DS-ON), but also that the position of the electric field peaks plays a role in the trapping phenomenon, responsible for the dynamic R_(DS-ON) increase at high OFF-state drain-bias. These results show that the source field-plate must be carefully designed in order to obtain a low dynamic R_(DS-ON) at high bias.