Design of power integrated circuits in full AIGaN/GaN MIS-HEMT configuration for power conversion

摘要

In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC-DC buck converter design with integrated high-side gate driver, over-current protection, and pulse-width-modulation feedback control circuits based on full AIGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-ON and normally-OFF AIGaN/GaN MIS-HEMT devices, the DC-DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over-current protection function can properly protect the converter at a preset over-current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all-GaN DC-DC power converter design.