Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen

摘要

We have grown thick AlN epilayers on SiC substrates by a new solution growth technique using Cu solvents under atmospheric pressure nitrogen. By using growth apparatus based on CZ growth system with inductive heating, we have grown AlN single crystalline layers of which thickness were more than 200 μm on (4H,6H)-SiC substrates at relatively low growth temperatures such as 1600℃-1800℃. Inch-size self standing AlN crystals were also prepared by removing the SiC substrate. TEM observation, ω-scan XRD measurement and cathode luminescence spectroscopy were conducted to characterize the crystallin-ity of the obtained AM layers.