Reduction of self-heating in AlGaN/GaN HFETs using thick AlN surface passivation films

摘要

We have fabricated and investigated AlGaN/GaN het-crojunclion field-effect transistors (HFETs) with thick AlN surface passivation films. The HFETs exhibit increased drain currents and the transconductances with suppression of the self-heating-induced negative differential conductance at high applied voltages.rnSince the effects are more prominent for thicker AlN films, we conclude that the AIN films cause not only surface passivation, but also self-heating reduction.