MBE-VLS growth of GaAs nanowires on (111)Si substrate

摘要

The growth of a GaAs nanowire was attempted on a (111)Si substrate by molecular beam epitaxy adopting the vapour-liquid-solid method with Au colloids as the catalysts, The shape of the nanowire was of a hexagonal column, of about 3 μm long. The growth rate of the wire was extremely high, as compared to the previous reports. The diameter near the bot-rntom of the wire was not equal to but larger than that measured at the top of the wire, which is attributed to the diffusion of the Ga precursors on the wire wall. It was found that the shape as well as size of the wire was sensitive to the growth conditions, and a long and thin nanowire was achieved at high Will ratios.