机译:(111)Si衬底上无催化剂III-V轴向异质结构纳米线的MBE-VLS生长
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
A1. Nanostructures; A1. Nanowires; A1. Heterostructure; A3. Molecular beam epitaxy; A3. Catalyst free; B2. Semiconducting gallium arsenide;
机译:Si(111)衬底上无催化剂的InN / In_xGa_(1-x)N核/壳纳米线异质结构的分子束外延生长和表征
机译:(111)Si衬底上无催化剂的GaAs纳米线的MBE-VLS生长
机译:(111)Si衬底上GaAs纳米线的MBE-VLS生长
机译:在Si衬底上的InAs纳米线的在辅助催化剂MBE-VLS生长
机译:一维硅纳米线的细胞响应以及在纳米线生长之前用氢氟酸蚀刻硅(111)基板的效果。
机译:Si(111)衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
机译:在GaN缓冲的Si(111)衬底上生长的轴向(In,Ga)N / GaN纳米线异质结构中的晶格拉动效应和应变松弛
机译:无催化剂的GaN纳米线生长和光电特性