In-assisted Catalyst-free MBE-VLS Growth of InAs Nanowires on Si Substrate

摘要

We fabricated InAs nanowires (NWs) on (111)Si substrate by In-assisted catalyst-free vapor-liquid-solid (VLS) method with a conventional molecular beam epitaxy. InAs NWs grew vertically on Si substrate and a polycrystalline growth was substantially suppressed under an optimized growth conditions. InAs/GaAs core-shell NWs were also grown and the core-shell structure was confirmed by a scanning transmission electron microscope and an energy dispersive X-ray spectroscopy.