Role of the buffer porous layer and dysprosium doping in GalnP-porGaAs-GaAs heterostructures

摘要

In the samples with porous buffer layer the residual internal stresses caused by the difference in lattice parameters between the surface layer of ternary GalnP alloy and GaAs sub-rnstrate are redistributed into the porous layer, which in this case plays a role of a "sponge" and completely removes the internal stresses.