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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

机译:掺杂铍的GaN缓冲层对外延AlGaN / GaN异质结构的电子性能的影响

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摘要

AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, d_(UID). varying between 50 nm and 500 nm. We have found that the heterostructures with UID buffers thicker than 200 nm exhibit much improved Hall properties and inter-device isolation current compared to heterostructures with d(UID) < 200 nm. The output conductance of devices fabricated on these heterostructures increases as d_(UID)decreases below 200 nm, and devices with gate lengths of 240 nm and 1 μm exhibited no significant difference in output conductance. Evidence of buffer trapping is observed in devices for which d_(UID) ≤ 100 nm. The observed effects are tentatively explained by the presence of parallel conduction paths in samples with non-optimized UID buffer thickness.
机译:已经通过射频等离子体分子束外延在独立式半绝缘GaN衬底上生长AlGaN / GaN / Be:GaN异质结构,采用厚度为d_(UID)的无意掺杂(UID)GaN缓冲层。在50 nm和500 nm之间变化。我们已经发现,与d(UID)<200 nm的异质结构相比,UID缓冲区厚度大于200 nm的异质结构表现出大大改善的霍尔特性和器件间隔离电流。当d_(UID)减小到200 nm以下时,在这些异质结构上制造的器件的输出电导会增加,并且栅极长度为240 nm和1μm的器件的输出电导没有显着差异。在d_(UID)≤100 nm的器件中观察到了缓冲捕集的证据。尝试通过未优化UID缓冲区厚度的样品中存在平行传导路径来初步解释观察到的效果。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1470-1473|共4页
  • 作者单位

    Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;

    rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;

    rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;

    rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    gallium nitride; high electron mobility transistor; molecular beam epitaxy; homoepitaxy; doping;

    机译:氮化镓高电子迁移率晶体管;分子束外延同性恋掺杂;
  • 入库时间 2022-08-18 01:34:59

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