机译:掺杂铍的GaN缓冲层对外延AlGaN / GaN异质结构的电子性能的影响
Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnElectronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA;
rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;
rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;
rnKyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;
gallium nitride; high electron mobility transistor; molecular beam epitaxy; homoepitaxy; doping;
机译:用于AlGaN / GaN HEMT的掺铍GaN缓冲层的分子束外延
机译:用2D电子气体的Inaln / GaN和AlGaN / GaN异质结构的性质形成高电阻率GaN缓冲层的方法的效果
机译:线错位形成的陷阱对AlGaN / GaN异质结构场效应晶体管中GaN缓冲层中态关闭特性的影响
机译:用于AlGaN / GaN HEMT的掺铍GaN缓冲层的分子束外延
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
机译:深能级瞬态光谱研究AlGaN / GaN异质结构中的深陷阱:GaN缓冲层中碳浓度的影响
机译:铍掺杂GaN缓冲层对外延alGaN / GaN异质结构电子性质的邻近效应