Electrical and optical performance of midwave infrared InAsSb heterostructure detectors

摘要

We investigate the high-operating temperature performance of InAsSb/AISb heterostructure detectors with cutoff wavelengths near 5 μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (with n-type conductivity), and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer type. Generally, the p-type absorber provides higher values of current responsivity than the n-type absorber, but at the same time also higher values of dark current. The device with the nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D* of nonimmersed devices vary from 2x10~9 to 5 × 10~9 cm Hz~(1/2) W~(-1) at 230 K, which is easily achievable with a two-stage thermoelectric cooler. Optical immersion increases the detectivity UP to 5 × 10~(10) Cm Hz~(1/2) W~(-1) .