Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors

摘要

Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors has been investigated. Device structure, processing steps and physical models are described in detail. In this work, our discussion is mainly focused on the operation temperature (T-ope) of BIB detector. It is demonstrated that the critical T-ope and the optimal T-ope both exist for GaAs-based BIB detector. It is only when the temperature-assisted photo electron excitation process is fundamentally equivalent to the temperature-assisted photo electron recombination process that the optimal T-ope occurs, and it is only when the temperature-assisted photo electron excitation process is dominated by the temperature-assisted photo electron recombination process that the critical T-ope occurs.