Electrical and spectral characterization of CdS/Si heterojunction prepared by plasma-induced bonding

摘要

In this work, the characteristics of the CdS/Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric heterojunction consisting of n-type CdS on a p-type silicon substrate. The Si substrate and CdS sample were bonded by subjecting them to the plasma formed between two electrodes. The measurements included the structural and electrical characteristics. The typical spectral responsivity within the range 400-800 nm and the maximum value is at 577 nm. With dark current of 6 μA, maximum reverse bias current of 670 μA and ideality factor of 3.5, the results explained better characteristics than those of the same heterojunction produced by other deposition techniques.