首页> 外文期刊>Optical and quantum electronics >Preparation and characterization of highly transparent and conductive indium-zinc oxide thin films deposited by pyrolysis spray technique
【24h】

Preparation and characterization of highly transparent and conductive indium-zinc oxide thin films deposited by pyrolysis spray technique

机译:热解喷涂技术沉积高透明导电铟锌氧化物薄膜的制备与表征

获取原文
获取原文并翻译 | 示例
           

摘要

Ternary compound films of ZnO-In_2O_3 system were prepared by spray pyrolysis method. The films were deposited on heated glass substrates by pyrolytic decomposition of zinc chloride and indium chloride in distilled water with different ratio x of [Zn] to [Zn + In] (x = [Zn]/[Zn + In]). The phase change, chemical composition, electrical and optical properties of the Zn-In oxides were investigated over wide range of ratio x. Quasi-amorphous sub-oxide films with thickness of 200-400 nm were first obtained, the films were then annealed in Argon atmosphere at 550 ℃ for 1 h. To optimize the physical properties of sprayed ZnO-In_2O_3 thin films, we carry out on a systematic study of their microstructural characterization and transport properties. Continuous structural variation from In_2O_3 to ZnO through Zn_2In_2O_5 and Zn_3In_2O_6 was observed on the deposited films with increasing the ratio x. Maximum of conductivity of 1.47 × 10~3 Ω~(-1) cm~(-1) was reached for x = 0.5 (at.%). We also concluded that the transport properties of the films are greatly governed by their microstructure.
机译:采用喷雾热解法制备了ZnO-In_2O_3三元复合膜。通过将氯化锌和氯化铟在蒸馏水中以[Zn]与[Zn + In]的不同比例x(x = [Zn] / [Zn + In])热解分解,将薄膜沉积在加热的玻璃基板上。在宽比例x范围内研究了Zn-In氧化物的相变,化学组成,电学和光学性质。首先获得了厚度为200-400 nm的准非晶亚氧化物膜,然后将其在氩气气氛中于550℃退火1 h。为了优化喷涂的ZnO-In_2O_3薄膜的物理性能,我们对它们的微观结构表征和传输性能进行了系统的研究。随着比率x的增加,在沉积膜上观察到从In_2O_3到ZnO的连续结构变化,通过Zn_2In_2O_5和Zn_3In_2O_6。当x = 0.5(at。%)时,电导率的最大值达到1.47×10〜3Ω〜(-1)cm〜(-1)。我们还得出结论,薄膜的传输性能在很大程度上受其微观结构支配。

著录项

  • 来源
    《Optical and quantum electronics》 |2016年第6期|339.1-339.10|共10页
  • 作者单位

    Departement de Physique, Faculte des Science, Laboratoire des Sciences de l'Ingenieur et Modelisation, Kenitra, Morocco;

    Faculty of Mathematics and Natural Sciences, J. Dlugosz Academy of Czestochowa, Institute of Physics, Al. Armii Krajowej 13/15, Czestochowa, Poland;

    Departement de Physique, Faculte des Science, Laboratoire d'Optoelectronique, de Physico-chimie des Materiaux et Environnement, Kenitra, Morocco;

    Equipe de Physique des Solides pour l'Electronique, Groupe Couches Minces et Materiaux Nouveaux, FSTN, Universite de Nantes, 2 rue la Houssiniere, BP 9209, 44322 Nantes Cedex, France;

    Faculte des Sciences Semlalia, Laboratoire de Physique du Solide et des Couches Minces, Bvd du Prince Moulay Abdellah, BP S15, Marrakech, Morocco;

    Laboratoire de Genie des Systemes Electriques et Reseaux des Telecommunications, Ecole Nationale des Sciences Appliquees de Kenitra, Universite Ibn Tofail, Kenitra, Morocco;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thin films; Zn_kIn_2O_(k+3); Spray pyrolysis; Microstructure; Transport properties;

    机译:薄膜;Zn_kIn_2O_(k + 3);喷雾热解;微观结构运输性质;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号