机译:具有封闭和开放隔离沟槽的氧化物限制的795 nm VCSEL的制造和激光特性
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China,University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China,University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China,University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;
Vertical cavity surface emitting lasers; Multiple quantum wells; Semiconductor Ⅲ-V materials; Photoelectronic device;
机译:具有无源散热的聚酰亚胺平坦氧化氧化物限制垂直腔表面发射激光器(VCSEL)二极管的特性
机译:氧化物受限的980 nm VCSEL在85°C时无错误的46 Gbit / s操作
机译:能源效率和温度稳定的氧化物限制的980 nm VCSEL在85 0; C下以38 Gbit / s的速度无错误运行
机译:用于10GB / s数据通信的高速和可靠的850nm氧化物限制VCSELS的高速和可靠的850nm
机译:在放电泵浦放大器中的Ne样硫中发射60.8 nm的激光,并通过外部磁场增强光束特性。
机译:横断面研究:市政老年护理的环境特征是否与员工频繁的短暂病假相比与总病假更紧密相关?
机译:超过1 km的多模光纤,850 nm氧化物限制的VCSEL的20 Gbit / s无错误运行
机译:氧化物限制VCsEL的制造问题