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Energy-Aware Writes to Non-Volatile Main Memory

机译:能源意识写入非易失性主存储器

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摘要

Scalability challenges of DRAM technology call for advances in emerging memory technologies, among which Phase Change Memory (PCM) has received considerable attention due to its non-volatility, storage density and capacity advantages. The drawbacks of PCM include limited write endurance and high power consumption for write operations (upto 10× in comparison to read operations). In this paper, we investigate new techniques that would perform writes to PCM with energy awareness. Our results show that we can minimize the write energy consumption by up to 8.1 × by simply converting PCM native writes to read-before-write, and upto an additional 22.9% via intelligent out-of-position updates.
机译:DRAM技术的可扩展性挑战要求新兴存储技术的发展,其中相变存储器(PCM)由于其非挥发性,存储密度和容量优势而备受关注。 PCM的缺点包括有限的写入耐久性和写入操作的高功耗(与读取操作相比,最高可达10倍)。在本文中,我们研究了一些新技术,这些技术将以能量意识对PCM进行写操作。我们的结果表明,通过简单地将PCM本地写转换为写前读取,以及通过智能错位更新将其额外增加22.9%,我们可以将写能耗降至8.1倍。

著录项

  • 来源
    《Operating systems review 》 |2011年第3期| p.48-52| 共5页
  • 作者单位

    Department of Electrical and Computer Engineering George Washington University, Washington DC;

    Department of Electrical and Computer Engineering George Washington University, Washington DC;

    Department of Electrical and Computer Engineering George Washington University, Washington DC;

    Department of Electrical and Computer Engineering George Washington University, Washington DC;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    phase change memory; energy efficiency;

    机译:相变存储器能源效率;

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