Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing

摘要

The effects of electric field and doping species on directional crystallization of a-Si channels under high-density cur to a dose of rent stressing have been investigated. The a-Si channels were implanted by 30 keV BF2+ or As+ 3 x 10(15) ions/cm(2). A preferential growth of poly-Si from anode toward cathode was found on BF2+, As+ and unimplanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing. (c) 2005 Elsevier B.V. All rights reserved.