Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

摘要

Silicon capped by thermal oxide has been implanted with 1 x 10~(17) H/cm~2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage.