Comparative study of polyatomic secondary ion emission from silicon with Au_m~-, Si_m~- and C_m~- projectiles

摘要

Comparative studies of the emission of the cluster Si_n~+ ions (n = 1-11) and polyatomic Si_nX~+ ions (X is B, C, N) under bombardment of single crystalline silicon by the cluster Au_m~- (m = 1-9), Si_m~- (m = 1-6) and C_m~- (m = 1-10) ions with energy E_0 = 4-18 keV have been carried out. Significant non-additive enhancement of the yield of the Si_n~+ cluster ions and most polyatomic ones has been observed with an increase in the number of the atoms in the cluster projectiles. In spite of the fact that the yield of secondary cluster ions under C_m~- and Si_m~- bombardment was less than that under Au_m~- bombardment, the relative enhancement of the yield with an increase in the number of atoms in the cluster projectiles was approximately the same for all types of projectiles with the same m. Strong increase in the yield of Si_3B~+, Si_3C~+, Si_2N~+ ions by 100-1000 times has been observed when both Si_m~- and Au_m~- projectiles with m = 5-9 instead of atomic ones were used.