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Degradation of a COTS linear CCD induced by proton irradiation

机译:质子辐照引起的COTS线性CCD的降解

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摘要

A Commercial Off-The-Shelf (COTS) linear CCD irradiated by protons is examined experimentally in this study. A dummy output voltage, the charge transfer efficiency (CTE) and a dark signal were degraded by 2-, 5-, and 10-MeV proton irradiation for comparison. The CCDs irradiated by 2-MeV protons were damaged most seriously, and the CCDs irradiated by 5-MeV protons were damaged more than those irradiated by 10-MeV protons. Biased CCDs were damaged more seriously than unbiased CCDs with the same proton irradiation conditions. The vacancy density and distribution induced by proton displacement damage and the ionizing energy loss induced by proton ionization damage were calculated using TRIM software. The correlation between CTE degradation and nonionizing energy loss is analyzed.
机译:在这项研究中,实验研究了质子辐照的商用现货(COTS)线性CCD。为了进行比较,通过2 Me,5 MeV和10 MeV质子辐照降低了虚拟输出电压,电荷转移效率(CTE)和暗信号。用2 MeV质子辐照的CCD受到的损害最严重,用5 MeV质子辐照的CCD的损害要比用10 MeV质子辐照的CCD损害更大。在相同的质子辐照条件下,有偏CCD比无偏CCD受到的损害更大。利用TRIM软件计算了质子位移损伤引起的空位密度和分布以及质子电离损伤引起的电离能损失。分析了CTE降解与非电离能损失之间的相关性。

著录项

  • 来源
    《Nuclear Instruments & Methods in Physics Research》 |2010年第18期|P.2724-2728|共5页
  • 作者单位

    Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Department of Engineering Physics, University of Tsinghua, Beijing China;

    rnKey Laboratory of Particle & Radiation Imaging of Ministry of Education, Department of Engineering Physics, University of Tsinghua, Beijing China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

    rnNorthwest Institute of Nuclear Technology, P.O. Box 69-10, Xi'an, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    charge-coupled devices (CCDs); charge transfer efficiency (CTE); dark signal voltage; nonionizing energy loss; proton; radiation damage;

    机译:电荷耦合器件(CCD);电荷转移效率(CTE);暗信号电压;非电离能量损失;质子辐射损伤;

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