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Evaluation of the Degradation on a COTS Linear CCD Induced by Total Ionizing Dose Radiation Damage

机译:通过电离剂量辐射损伤诱导的COT线性CCD的降解评价

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摘要

The evaluation of the degradation on a COTS linear Charge Coupled Device (CCD) induced by total ionizing dose (TID) radiation damage was presented. The radiation experiments were carried out at a 60Co γ-ray source. The parameters of DALSA’s linear CCD were measured at the CCD test systems as the EMVA1288 standard before and after the radiation. The dark current, dark signal nonuniformity (DSNU), photo response nonuniformity (PRNU), saturation output, full-well capacity (FWC), quantum efficiency (QE), and responsivity versus the TID were analyzed. The behavior of the tested CCD had shown a remarkable degradation after radiation. The degradation mechanisms of the CCD induced by TID damage were also discussed.
机译:介绍了通过离电容剂(TID)辐射损伤诱导的尖端线性电荷耦合装置(CCD)的降解评价。辐射实验在60COγ射线源进行。在CCD测试系统中测量Dalsa线性CCD的参数作为辐射之前和之后的EMVA1288标准。分析了暗电流,暗信号不均匀性(DSNU),光响应不均匀性(PRNU),饱和输出,全井容量(FWC),量子效率(QE)和响应性与TID相反。经过测试的CCD的行为在辐射后显示出显着的降解。还讨论了TID损坏诱导的CCD的降解机制。

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