Synthesis of nanostructured multiphase (Ti,Al)N/a-Si_3N_4 thin films using dense plasma focus device

摘要

A 2.3 kJ pulsed plasma focus device was used to prepare thin films of nc-(Ti,Al)N/a-Si_3N_4 at room temperature. The plasma focus device, fitted with copper anode encapsulated with Ti_(0.5)Al_(0.5) anode, was operated with nitrogen as the filling gas. Films were deposited with various number of focus shots, at 90 mm from top of the anode and at zero angular position with respect to anode axis. XRD patterns show the growth of polycrystalline (Ti,Al)N thin films with orientations in the (111), (2 0 0), (2 2 0) and (311) crystallo-graphic planes. Behavior of lattice constant, grain size and film roughness of deposited film as a function of variation in number of focus shots is discussed. SEM micrographs of film deposited with 15 number of focus shots exhibit well-developed net like structure of nc-(Ti,Al)N/a-Si_3N_4 and possibly nc-(Ti,Al)N/a-Si_3N_4/a-AlN or nc-TiN/a-Si_3N_4/a-AlN. Surface Roughness ranging 64 nm to 89 nm was also observed.