...
首页> 外文期刊>Plasma Science, IEEE Transactions on >Dense Plasma Focus Device Based High Growth Rate Room Temperature Synthesis of Nanostructured Zinc Oxide Thin Films
【24h】

Dense Plasma Focus Device Based High Growth Rate Room Temperature Synthesis of Nanostructured Zinc Oxide Thin Films

机译:基于密集等离子体聚焦装置的高生长速率室温合成纳米结构氧化锌薄膜

获取原文
获取原文并翻译 | 示例
           

摘要

High-energy-density plasmas in plasma focus device are now routinely being used as nonconventional plasma nanotechnology tool with novel processing and deposition parameters which are not available in conventional low-temperature plasma facilities. This paper reports the synthesis of multilayered polycrystalline intrinsic defects-free nanostructured zinc oxide (ZnO) thin film onto room-temperature silicon substrates at high growth rates using pulsed high-energy-density dense plasma focus device. The device was operated in pure oxygen environment and the ablation target used was a pure zinc rod fitted onto the anode top. Thin films of ZnO were deposited at room temperature using different numbers of dense plasma focus shots and at different distances from the anode top. The as-deposited ZnO showed the formation of polycrystalline hexagonal phase ZnO thin films with strong -axis orientation. The scanning electron microscopy results showed either uniformly laid nanoparticles or cauliflower aggregates of nanoparticles on the surface of the thin-film samples with average nanoparticle size varying between 23.3 ± 6.1 and 69.7 ± 16.5 nm. The average thicknesses of the multilayered thin films were measured to be in a range of 1.06 ± 0.14 to about . The complete disappearance of deep level emission band in photoluminescence spectrum of ZnO thin-film sample deposited using 30 focus shots at deposition distance of 15 cm showed successful synthesis of high crystalline quality intrinsic defects-free as-deposited ZnO thin film. One of the key features of the ZnO thin-film synthesis using nonconventional plasma focus device is the very high average growth rate of about /shot. At one plas- a focus shot per minute operation, the average growth rate comes out to be /min, which is either higher or comparable with commonly used ZnO deposition methods; but at 10 Hz operation extreme growth rates of about /min could be achieved.
机译:如今,等离子体聚焦装置中的高能量密度等离子体通常被用作具有常规低温等离子体设备所不具备的新颖处理和沉积参数的非常规等离子体纳米技术工具。本文报道了使用脉冲高能密度致密等离子体聚焦装置以高生长速率在室温硅衬底上合成多层多晶固有无缺陷纳米结构的氧化锌(ZnO)薄膜。该设备在纯氧环境下运行,烧蚀目标是安装在阳极顶部的纯锌棒。 ZnO薄膜是在室温下使用不同数量的密集等离子聚焦镜头和距阳极顶部的不同距离沉积的。沉积的ZnO显示出具有强轴取向的多晶六方相ZnO薄膜的形成。扫描电子显微镜结果显示在薄膜样品表面上均匀分布的纳米颗粒或菜花聚集体,平均纳米颗粒大小在23.3±6.1和69.7±16.5 nm之间变化。测得的多层薄膜的平均厚度在1.06±0.14至约的范围内。在15 cm的沉积距离下使用30个聚焦镜头沉积的ZnO薄膜样品的光致发光光谱中的深能级发射带完全消失,表明成功合成了高结晶质量,无内在缺陷的ZnO薄膜。使用非常规等离子体聚焦装置的ZnO薄膜合成的关键特征之一是大约/ shot的非常高的平均增长率。在每分钟操作一次聚焦时,平均增长率为/ min,与通常使用的ZnO沉积方法相比更高或相当。但是在10 Hz的工作频率下,可以达到大约/ min的极高增长率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号