METHOD OF MAKING THIN FILMS DIELECTRICS USING A PROCESS FOR ROOM TEMPERATURE WET CHEMICAL GROWTH OF SIO BASED OXIDES ON A SUBSTRATE

摘要

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.