机译:100 MeV Ag离子辐照在GaAs中产生的应变
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;
Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India;
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;
Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India;
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;
Ion irradiation; GaAs; Raman; HRXRD;
机译:〜(84)Kr(394 MeV),〜(209)Bi(710 MeV)和〜(238)U(1300 MeV)快速离子辐照的GaAs单晶中的损伤分布
机译:在n-GaAs中通过快速(〜100 MeV)Si〜(7+)和Au〜(7+)离子进行表面改性
机译:100 MeV Si〜(7+)离子辐照的Pd / n-GaAs器件的电学和XPS研究
机译:在GaAs(100)中200meV Ag〜(14 +)离子产生的应变场的X射线地形研究
机译:通过使用应变平衡和分布布拉格反射器优化InGaAs量子阱,改善GaAs太阳能电池中的子带隙载体收集
机译:100MeV Ag离子辐照对石墨烯的纯化/退火
机译:MeV离子轰击的晶体材料中的应变/损伤:高剂量辐照使GaAs重结晶
机译:1 meV电子辐照后alGaas,Gaas和InGaas电池的性能